Samsung has just released some massive news regarding their upcoming flash storage chips. In a recent announcement, Samsung has announced the beginning of massive production of their 512GB eUFS 3.0 flash modules.
Details provided by Samsung claim that these chips would offer immense speed upgrades over current eUFS 2.1 standards in every category. Furthermore, these newly-introduced modules feature sequential reads as fast as 2100MB/s and writes as fast as 410MB/s.
However, what did catch out eye besides the fact that these are eUFS 3.0 device is the fact that Samsung plans to expand the storage capacities as well all-the-while, featuring the UFS 3.0 standard. Samsung says that they’re expecting the mass production of 256GB and 1TB modules to begin by second-half of 2019, making the storage option more than compelling for the last few flagships that arrive at the end of the year.
Given all the details we’ve gathered so far, there’s a good chance that the upcoming Samsung Galaxy Note 10 may feature eUFS 3.0 modules, that too, ranging up to 1TB in capacity. Afterall, hitting that 1TB mark with UFS 3.0 would be an absolute blast and necessary for Samsung given that the Galaxy S10 Plus has hit the 1TB mark.
Given the timing and roadmap, Samsung has laid out here simply lineup with the launch of the Galaxy Note 10 later this year. From the announcement of the Exynos
In addition, with all three eUFS 3.0 storage modules now confirmed to be releasing in 2019, there’s also a good chance that Samsung may move up to 256GB of internal storage as its base variant on the Galaxy Note 10, further cementing Samsung’s position in the flash market.
